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Increasing degree of homogeneity of homogeneity of electrical parameters of neutron-transmuted silicon

Author(s):
Publication title:
Challenges in process integration and device technology : 18-19 September 2000, Santa Clara, USA
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
4181
Pub. Year:
2000
Page(from):
287
Page(to):
290
Pages:
4
Pub. info.:
Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819438423 [0819438421]
Language:
English
Call no.:
P63600/4181
Type:
Conference Proceedings

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