Radiation-induced dark current increase in CMOS active pixel sensors
- Author(s):
- Publication title:
- Photonics for space environments VII : 31 July - 1 August 2000, San Diego, USA
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 4134
- Pub. Year:
- 2000
- Page(from):
- 105
- Page(to):
- 114
- Pages:
- 10
- Pub. info.:
- Bellingham, Wash.: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819437792 [0819437794]
- Language:
- English
- Call no.:
- P63600/4134
- Type:
- Conference Proceedings
Similar Items:
SPIE - The International Society for Optical Engineering |
7
Conference Proceedings
Effects of Silicon Nitride Passivation Layer on Mean Dark Current and Quantum Efficiency of CMOS Active Pixel Sensors
Materials Research Society |
SPIE - The International Society of Optical Engineering |
8
Conference Proceedings
Advances in ultralow-power highly integrated active pixel sensor CMOS imagers for space and radiation environments
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
Society of Photo-optical Instrumentation Engineers |
4
Conference Proceedings
NEXT GENERATION CMOS ACTIVE PIXEL SENSORS FOR ATTITUDE AND ORBIT CONTROL SYSTEMS
ESA Publications Division |
10
Conference Proceedings
lntegrated Imaging Sensor Systems with CMOS Active Pixel Sensor Technology
Electrochemical Society |
SPIE |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
12
Conference Proceedings
Hybrid long-wavelength IR sensor based on a linear array of poly Si-Ge uncooled microbolometers with a CMOS readout
SPIE-The International Society for Optical Engineering |