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High density plasma damage induced in n-GaN schottky diodes using Cl2/Ar discharges

Author(s):
Zhang, A. P.
Dang, G.
Ren, F.
Cao, X. A.
Cho, H.
Lambers, E. S.
Pearton, S. J.
Shul, R. J.
Zhang, L.
Baca, A. G.
Hickman, R.
Hove, J. M. Van
7 more
Publication title:
GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
595
Pub. date:
2000
Page(from):
W11.66.1
Pub. info.:
Warrendale, Pa.: MRS-Materials Research Society
ISSN:
02729172
ISBN:
9781558995031 [155899503X]
Language:
English
Call no.:
M23500/595
Type:
Conference Proceedings

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