Blank Cover Image

Spectroscopic ellipsometry analysis of InGaN/GaN and AlGaN/GaN heterostructures using a parametric dielectric function model

Author(s):
Wagner, J.
Ramakrishnan, A.
Ohloh, H.
Kunzer, M.
Kohler, K.
Johs, B.
1 more
Publication title:
GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
595
Pub. Year:
2000
Page(from):
W11.54.1
Pub. info.:
Warrendale, Pa.: MRS-Materials Research Society
ISSN:
02729172
ISBN:
9781558995031 [155899503X]
Language:
English
Call no.:
M23500/595
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Composition Dependence of the Bandgap Energy of InxGa1-xN Layers on GaN (x｡？.15) Grown by Metalorganic Chemical Vapor Deposition

Wagner, J., Ramakrishnan, A., Behr, D., Maier, M., Herres, N., Kunzer, M., Obloh, H., Bachem, K-H.

MRS - Materials Research Society
7 Conference Proceedings Optical properties of InGaN/GaN and AlGaN/GaN multiple quantum well structures

Monemar, B., Paskov, P.P., Haratizadeh, H., Pozina, G.R., Bergman, J.P., Kamiyama, S., Iwaya, M., Amano, H., Akasaki, I.

SPIE-The International Society for Optical Engineering
2 Conference Proceedings Measurement of the dielectric function spectra of low dielectric constant using the spectroscopic ellipsometry

Horie, M., Postava, K., Yamaguchi, T., Akashika, K., Hayashi, H., Kitamura, F.

SPIE-The International Society for Optical Engineering
8 Conference Proceedings Real-time monitoring and control during MBE growth of GaAs/AIGaAs Bragg reflectors using multiwave ellipsometry

Wagner,T., Johs,B.D., Herzinger,C.M., He,P., Pittal,S., Woollam,J.A.

SPIE-The International Society for Optical Engineering
3 Conference Proceedings Real-Time Monitoring of Semiconductor Growth by Spectroscopic Ellipsometry

Johs, B., Hale, J., Herzinger, C., Doctor, D., Elliott, K., Olson, G., Chow, D., Roth, J., Ferguson, I., Pelczynski, M., …

MRS - Materials Research Society
9 Conference Proceedings IR-VUV Dielectric Function of Al1-xInxN Determined by Spectroscopic Ellipsometry

Kasic, A., Schubert, M., Rheinlaender, B., Off, J., Scholz, F., Herzinger, C. M.

Materials Research Society
4 Conference Proceedings Optical Monitoring of Thin Films Using Spectroscopic Ellipsometry

D.E. Morton, B. Johs, J. Hale

Society of Vacuum Coaters
10 Conference Proceedings Life testing and failure analysis of GaN/AlGaN/InGaN light-emitting diodes

Osinski,M., Barton,D.L., Helms,C.J., Berg,N.H., Perlin,P.

SPIE-The International Society for Optical Engineering
5 Conference Proceedings Spectroscopic Ellipsometry Study of HgCdTe Epilayer Surfaces During Electron Cyclotron Resonance Plasma Etching

Johnson, J. N., Dinan, J. H., Singley, K. M., Martinka, M., Johs, B.

MRS - Materials Research Society
11 Conference Proceedings Progress in Novel Oxides for Gate Dielectrics And Surface Passivation of GaN/AlGaN Heterostructure Field Effect Transistors

Abernathy, C.R., Gila, B.P., Onstine, A.H., Pearton, S.J., Kim, J., Luo, B., Mehandru, R., Ran, F., Gillespie, J.K., …

Electrochemical Society
6 Conference Proceedings Recent Developments in Spectroscopic Ellipsometry for Materials and Process Control

J.N. Hilfiker, B. Johs, J. Hale, C.M. Herzinger, T.E. Tiwald, C.L. Bungay, R.A. Synowicki, G.K. Pribil, J.A. Woollam

Society of Vacuum Coaters
12 Conference Proceedings Iron Acceptors in Gallium Nitride(GaN)

Maier,K., Kunzer,M., Kaufmann,U., Schneider,J., Monemar,B., Akasaki,I., Amano,H.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12