The role of the multi buffer layer technique on the structural quality of GaN
- Author(s):
Benamara, M. Liliental-Weber, Z. Mazur, J. H. Swider, W. Washburn, J. Iwaya, M. Akasaki, I. Amano, H. - Publication title:
- GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 595
- Pub. Year:
- 2000
- Page(from):
- W5.8.1
- Pub. info.:
- Warrendale, Pa.: MRS-Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558995031 [155899503X]
- Language:
- English
- Call no.:
- M23500/595
- Type:
- Conference Proceedings
Similar Items:
Materials Research Society |
MRS-Materials Research Society |
2
Conference Proceedings
Effect of the doping and the Al content on the microstructure and morphology of thin Alx Ga1-xN layers grown by MOCVD
MRS-Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
MRS-Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
5
Conference Proceedings
TEM/HREM Analysis of Defects in GaN Epitaxial Layers Grown by MOVPE on SiC and Sapphire
MRS - Materials Research Society |
11
Conference Proceedings
High Efficiency UV Emitter Using High Quality GaN/AlxGa1-xN Multi-Quantum Well Active Layer
Materials Research Society |
MRS - Materials Research Society |
MRS-Materials Research Society |