Two-dimensional electron gas transport properties in AlGaN/(In)GaN/AlGaN double-heterostructure field effect transistors

Two-dimensional electron gas transport properties in AlGaN/(In)GaN/AlGaN double-heterostructure field effect transistors

Author(s):

Publication title:

GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

595

Pub. Year:

2000

Page(from):

W4.7.1

Pub. info.:

Warrendale, Pa.: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558995031 [155899503X]

Language:

English

Call no.:

M23500/595

Type:

Conference Proceedings

Details

TDL ID:	ZA00020895
Series ID:	PA00000011
Conf. info. (Name):	Symposium on GaN and Related Alloys
Conf. info. (Number):	1999
Conf. info. (Venue):	Boston, Massachusetts, USA
Conf. info. (Date):	1999.11.28-1999.12.03

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