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A study of the effect of V/III flux ratio and substrate temperature on the In incorporation efficiency in InxGa1-x/GaN heterostructures grown by RF plasma-assisted molecular beam epitaxy

Author(s):
Publication title:
GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
595
Pub. Year:
2000
Page(from):
W3.27.1
Pub. info.:
Warrendale, Pa.: MRS-Materials Research Society
ISSN:
02729172
ISBN:
9781558995031 [155899503X]
Language:
English
Call no.:
M23500/595
Type:
Conference Proceedings

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