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Influence of uniaxial pressure on the photoionization of h-centers in semiconductors

Author(s):
Abramov,A.A. ( Donbass State Engineering Academy )
Akimov,V.I.
Dalakyan,A.T.
Firsov,D.A.
Tulupenko,V.N.
Vasko,F.T.
1 more
Publication title:
Fourth International Conference on Material science and material properties for infrared optoelectronics : 29 September-2 October 1998, Kiev, Ukraine
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3890
Pub. Year:
1999
Page(from):
201
Page(to):
207
Pub. info.:
Bellingham, Washington: SPIE - The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819434913 [0819434914]
Language:
English
Call no.:
P63600/3890
Type:
Conference Proceedings

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