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Depth inhomogeneity of ZnTe,CdZnTe,ZnSe epilayers grown on(001)GaAS of MBE

Author(s):
Venger,E.F. ( Institute of Semiconductor Physics )
Sadof'ev,Yu.G.
Semenova,G.N.
Korsunskaya,N.E.
Klad'ko,V.P.
Embergenov,B.
Dzhumaev,B.R.
Borkovskaya,L.V.
Semtsiv,M.P.
Sharibaev,M.
5 more
Publication title:
Fourth International Conference on Material science and material properties for infrared optoelectronics : 29 September-2 October 1998, Kiev, Ukraine
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3890
Pub. Year:
1999
Page(from):
170
Page(to):
176
Pub. info.:
Bellingham, Washington: SPIE - The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819434913 [0819434914]
Language:
English
Call no.:
P63600/3890
Type:
Conference Proceedings

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