High-injection behavior of InGaAs quantum well

High-injection behavior of InGaAs quantum well

Author(s):

Eliseev,P.G. ( Univ.of New Mexico and P.N.Lebedev Physical Institute )
Akimova,I.V.

Publication title:

Physics and simulation of optoelectronic devices VII : 25-29 January 1999, San Jose, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3625

Pub. Year:

1999

Page(from):

728

Page(to):

739

Pub. info.:

Bellingham, Wash.: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819430953 [0819430951]

Language:

English

Call no.:

P63600/3625

Type:

Conference Proceedings

Details

TDL ID:	ZA00020862
Series ID:	PA00000029
Conf. info. (Name):	Photonics West : Physics and Simulation of Optoelectronic Devices
Conf. info. (Number):	1999 : 7th
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	1999.01.25-1999.01.29

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