Rote of p-doping profile in InGaAsP multiquantum well lasers:comparison of simulation and experiment
- Author(s):
Hybertsen,M.S. ( Lucent Technologies/Bell Labs. ) Alam,M.A. Shtengel,G.E. Belenky,G.L. Reynolds,C.L.,Jr. Donetsky,D.V. Smith,R.K. Baraff,G.A. Kazarinov,R.F. Wynn,J.D. Smith,L.E. - Publication title:
- Physics and simulation of optoelectronic devices VII : 25-29 January 1999, San Jose, USA
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 3625
- Pub. Year:
- 1999
- Page(from):
- 524
- Page(to):
- 534
- Pub. info.:
- Bellingham, Wash.: SPIE - The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819430953 [0819430951]
- Language:
- English
- Call no.:
- P63600/3625
- Type:
- Conference Proceedings
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