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Rote of p-doping profile in InGaAsP multiquantum well lasers:comparison of simulation and experiment

Author(s):
Hybertsen,M.S. ( Lucent Technologies/Bell Labs. )
Alam,M.A.
Shtengel,G.E.
Belenky,G.L.
Reynolds,C.L.,Jr.
Donetsky,D.V.
Smith,R.K.
Baraff,G.A.
Kazarinov,R.F.
Wynn,J.D.
Smith,L.E.
6 more
Publication title:
Physics and simulation of optoelectronic devices VII : 25-29 January 1999, San Jose, USA
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3625
Pub. Year:
1999
Page(from):
524
Page(to):
534
Pub. info.:
Bellingham, Wash.: SPIE - The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819430953 [0819430951]
Language:
English
Call no.:
P63600/3625
Type:
Conference Proceedings

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