Blank Cover Image

Deposition and characterization of ultrathin Ta2O5 layers deposited on silicon from a Ta(OC2H5)5 precursor

Author(s):
Chaneliere, C.
Autran, J. L.
Raynard, J. P.
Michailos, M.
Barla, K.
Ushikawa, H.
Hiroe, A.
Shimomura, K.
Kakimoto, A.
4 more
Publication title:
Structure and electronic properties of ultrathin dielectric films on silicon and related structures : symposium held November 29-December 1, 1999, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
592
Pub. Year:
2000
Page(from):
75
Pub. info.:
Warrendale, PA: MRS-Materials Research Society
ISSN:
02729172
ISBN:
9781558995000 [1558995005]
Language:
English
Call no.:
M23500/592
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Crystallization and Wet Etching Characteristics of Atomic Layer Deposited HfO₂ Films Using Hf[N(CH₃)(C₂H₅)]₃[OC(CH₃)₃]) Precursor and O₃ Oxidant

M. Seo, S. Kim, K. Kim, T. Park, J. Kim, C. Hwang, H. Cho

Electrochemical Society
7 Conference Proceedings GROWTH OF MICROCRYSTALLINE SILICON IN ULTRATHIN LAYERS

Wu, Y.-J., Persans, P.D., Abeles, B., Wang, S.-L.

Materials Research Society
2 Conference Proceedings Atomic Layer Deposition of Ta2O5 Films Using Ta(OC2H5)5 and NH3

Song, H-J., Koh, W., Kang, S-W.

MRS - Materials Research Society
8 Conference Proceedings On the Interface Quality of MIS Structures Fabricated From Atomic Layer Deposition of HfO2, Ta2O5 and Nb2O5-Ta2O5-Nb2O5 Dielectric Thin Films

Duenas, S., Castan, H., Garcia, H., Barbolla, J., Kukli, K., Ritala, M., Leskela, M.

Materials Research Society
3 Conference Proceedings Electrical and physical characterization of ultrathin silicon oxynitride gate dielectric films formed by the jet vapor deposition technique

Karamcheti, A., Watt, V. H. C., Luo, T. Y., Brady, D., Shaapur, F., Vishnubhotla, L., Gale, G., Huff, H. R., Jackson, M. …

MRS-Materials Research Society
9 Conference Proceedings Deposition and Characterization of Strained SiGe Layer as an Etch Stop in Ultrathin SOI Integration

S.L. Suder, S. Bhattacharyya, R. Hurley, P. Baine, D. McNeill

Electrochemical Society
4 Conference Proceedings *Challenges in interface trap characterization of deep sub-micron MOS devices using charge pumping techniques

Autran, J. L., Masson, P., Ghibaudo, G.

MRS-Materials Research Society
10 Conference Proceedings Atomic layer deposition of dielectric Nb2O5 films using the NbI5-O2 precursor combination

Rooth, M., Kukli, K., Harsta, A.

Electrochemical Society
5 Conference Proceedings 28 Growth and characterization of Al2O3:HfO2 nanolaminate films deposited by Atomic Layer Deposition

D'Emic, C.P., Gusev, E.P., Copel, M., Newbury, I., Unvel, H., Kozlowski, P., Bruley, J., Murphy, R.

Electrochemical Society
11 Conference Proceedings 39 Characterization of Laminated CeO2-HfO2 High-k Gate Dielectrics Deposited by Pulsed Laser Deposition

Karakaya, K., Zinine, A., van Berkum, J.G.M., Croat, P., Verheijen, M.A., Rittersma, Z.M., Rijnders, G., Blank, D.H.A.

Electrochemical Society
6 Conference Proceedings The effect of precursors to the structure and conductivity of atomic layer deposited TiC2 films

Jogi, I., Aarik, J., Kukli, K., Kaambre, H., Laan, M., Lu, J., Sajavaara, T., Uustare, T.

Electrochemical Society
12 Conference Proceedings Ultrathin Silicon Oxide and Nitride - Silicon Interface States

Brillson, L. J., Young, A. P., Schafer, J., Niimi, H., Lucovsky, G.

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12