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Fabrication of high quality MOS devices for application in hazardous environments based on RTP gate dielectrics with in SITU RTCVD of polysilicon gates

Author(s):
Publication title:
III-V electronic and photonic device fabrication and performance : symposium held April 12-15, 1993, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
300
Pub. Year:
1993
Page(from):
587
Pub. info.:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558991965 [1558991964]
Language:
English
Call no.:
M23500/300
Type:
Conference Proceedings

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