Blank Cover Image

Nitrogen-atom bonding at SiO2/Si interfaces in Metal-Insulator-Semiconductor (MIS) stacked gates made by integration of plasma assisted oxidation-deposition and rapid thermal processing

Author(s):
Publication title:
III-V electronic and photonic device fabrication and performance : symposium held April 12-15, 1993, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
300
Pub. Year:
1993
Page(from):
569
Pub. info.:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558991965 [1558991964]
Language:
English
Call no.:
M23500/300
Type:
Conference Proceedings

Similar Items:

Yasuda, T., ma, Y., Lucovsky, G.

Materials Research Society

Ma, Y., Hattangady, S. V., Yasuda, T., Niimi, H., Gandhi, S., Lucovsky, G.

MRS - Materials Research Society

Lucovsky, G., Yasuda, T., Ma, Y., Hattangady, S. V., Xu, X-L., Misra, V., Hornung, B., Wortman, J. J.

MRS - Materials Research Society

Ma, Y., Yasuda, T., Habermehl, S., Lucovsky, G.

Materials Research Society

Lamb, H.H., Kalem, S., Bedge, S., Yasuda, T., Ma, Y., Lucovsky, G.

Materials Research Society

Ma, Y., Yasuda, T., Habermehl, S., Lucovsky, G.

Materials Research Society

Schafer, J., Young, A. P., Brillson, L. J., Niimi, H., Lucovsky, G.

MRS - Materials Research Society

Lee, David R., Parker, Christopher G., Hauser, John R., Lucovsky, Gerald

MRS - Materials Research Society

Ma, Y., Yasuda, T., Habermehl, S., He, S.S., Stephens, D.J., Lucovsky, G.

Materials Research Society

1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12