Low temperature SiNx as a sacrificial layer in novel device fabrication

Low temperature SiNx as a sacrificial layer in novel device fabrication

Author(s):

Lothian, J. R.

Publication title:

III-V electronic and photonic device fabrication and performance : symposium held April 12-15, 1993, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

300

Pub. Year:

1993

Page(from):

161

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558991965 [1558991964]

Language:

English

Call no.:

M23500/300

Type:

Conference Proceedings

Details

TDL ID:	ZA00020790
Series ID:	PA00000011
Conf. info. (Name):	Symposium on electronic and photonic device fabrication and performance
Conf. info. (Number):	1993
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1993.04.12-1993.04.15

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