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Effect of Extended Defects on the Enhanced Diffusion of Phosphorus Implanted Silicon

Author(s):
Keys, P. H.
Li, J. H.
Heitman, E.
Packan, P. A.
Law, M. E.
Jones, K. S.
1 more
Publication title:
Si front-end processing - physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
568
Pub. date:
1999
Page(from):
199
Pub. info.:
Warrendale, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994751 [1558994750]
Language:
English
Call no.:
M23500/568
Type:
Conference Proceedings

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