Transient Diffusion Effects of Sb and B in Si Induced by Medium- and High-Energy Implants of Si+ and As+ Ions

Transient Diffusion Effects of Sb and B in Si Induced by Medium- and High-Energy Implants of Si+ and As+ Ions

Author(s):

Publication title:

Si front-end processing - physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

568

Pub. Year:

1999

Page(from):

193

Pub. info.:

Warrendale, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994751 [1558994750]

Language:

English

Call no.:

M23500/568

Type:

Conference Proceedings

Details

TDL ID:	ZA00020789
Series ID:	PA00000011
Conf. info. (Name):	Symposium on si front-end processing-physics and technology of dopant-defect interactions
Conf. info. (Number):	1999
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1999.04.06-1999.04.09

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