First-Principles Study of Vacancy-Assisted As Diffusion in Silicon
- Author(s):
- Publication title:
- Si front-end processing - physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 568
- Pub. Year:
- 1999
- Page(from):
- 147
- Pub. info.:
- Warrendale, PA: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558994751 [1558994750]
- Language:
- English
- Call no.:
- M23500/568
- Type:
- Conference Proceedings
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