On the Influence of Boron-Interstitial Complexes on Transient Enhanced Diffusion
- Author(s):
- Publication title:
- Si front-end processing - physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 568
- Pub. Year:
- 1999
- Page(from):
- 141
- Pub. info.:
- Warrendale, PA: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558994751 [1558994750]
- Language:
- English
- Call no.:
- M23500/568
- Type:
- Conference Proceedings
Similar Items:
MRS - Materials Research Society |
7
Conference Proceedings
Low-Energy Implantation and Transient-Enhanced Diffusion: Physical Mechanisms and Technology Implications
MRS - Materials Research Society |
MRS - Materials Research Society |
8
Conference Proceedings
On the 「紜symmetrical「?Behavior of Transient Enhanced Diffusion in Pre-Amorphized Si Wafers
MRS - Materials Research Society |
3
Conference Proceedings
Influence of Flouring and BF2 Implants on the Transient Enhanced Diffusion of Boron
Electrochemical Society |
Materials Research Society |
MRS - Materials Research Society |
10
Conference Proceedings
The Role of Vacancies and Interstitials in Transient-Enhanced Diffusion of Arsenic Implanted Into Silicon
MRS - Materials Research Society |
Electrochemical Society |
11
Conference Proceedings
Role of Silicon and Boron Interstitial Clusters in Transient Enhanced Diffusion
Electrochemical Society |
Electrochemical Society, SPIE-The International Society for Optical Engineering |
12
Conference Proceedings
Effects of Interstitial Clustering on Transient-Enhanced Diffusion of Boron in Silicon
MRS - Materials Research Society |