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Implantation Activation Annealing of Si-Implanted Gallium Nitride at Temperatures > 1100°C

Author(s):
Zolper, J. C.
Han, J.
Biefeld, R. M.
Van Deusen, S. B.
Wampler, W. R.
Pearton, S. J.
Williams, J. S
Tan, H. H.
Karlicek, R. J., Jr.
Stall, R. A.
5 more
Publication title:
Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
468
Pub. date:
1997
Page(from):
401
Pub. info.:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993723 [155899372X]
Language:
English
Call no.:
M23500/468
Type:
Conference Proceedings

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