Blank Cover Image

Plasma Damage Effects in InAlN Field-Effect Transistors

Author(s):
Ren, F.
Lothian, J. R.
Chen, Y. K.
MacKenzie, J. D.
Donovan, S. M.
Abernathy, C. R.
Vartuli, C. B.
Lee, J. W.
Pearton, S. J.
Wilson, R. G.
5 more
Publication title:
Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
468
Pub. Year:
1997
Page(from):
385
Pub. info.:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993723 [155899372X]
Language:
English
Call no.:
M23500/468
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Dry Etch Damage in InN, InGaN and InAlN

Pearton, S. J., Lee, J. W., MacKenzie, J. D., Vartuli, C. B., Donovan, S. M., Abernathy, C. R., Shul, R. J., Ren, F., …

MRS - Materials Research Society
7 Conference Proceedings Effect of N2 Plasma Treatments on Dry Etch Damage in n- and p-type GaN

Kent, D. G., Lee, K.P., Zhang, A. P., Luo, B., Overberg, M.E., Abernathy, C. R., Ren, F., Mackenzie, K. D., Pearton, …

Materials Research Society
2 Conference Proceedings Plasma Chemistries for Dry Etching GaN, AlN, InGaN and InAlN

Pearton, S. J., Vartuli, C. B., Lee, J. W., Donovan, S. M., MacKenzie, J. D., Abernathy, C. R., Shul, R. J., McLane, G. …

MRS - Materials Research Society
8 Conference Proceedings W, WSix and Ti/Al Low Resistance Ohmic Contacts to InGaN, InN and InAlN

Vartuli, C. B., Pearton, S. J., Abernathy, C. R., MacKenzie, J. D., Shul, R. J., Zolper, J. C., Lovejoy, M. L., Baca, A. …

MRS - Materials Research Society
3 Conference Proceedings Chemical Etching of AlN and InAlN in KOH Solutions

Vartuli, C. B., Lee, J. W., MacKenzie, J. D., Pearton, S. J., Abernathy, C. R., Zolper, J. C., Shul, R. J., Ren, F.

MRS - Materials Research Society
9 Conference Proceedings Properties of H, O and C in GaN

Pearton, S. J., Abernathy, C. R., Lee, J. W., Vartuli, C. B., MacKenzie, J. D., Ren, F., Wilson, R. G., Zavada, J. M., …

MRS - Materials Research Society
4 Conference Proceedings Effects of N2 or Ar Plasma Exposure on GaAs/AlGaAs Heterojunction Bipolar Transistors *

Hsu, C.H., Chen, C.C., Ren, B.Luo.F., Pearton, S.J., Abernathy, C.R., Lee, J.W., Mackenzie, K.D., Sasserath, J.

Electrochemical Society
10 Conference Proceedings Hydrogen Incorporation into III-V Nitrides During Processing

Pearton, S.J., Shul, R.J., Wilson, R.G., Ren, F., Zavada, J.M., Abernathy, C.R., Vartuli, C.B., Lee, J.W., Mileham, …

Electrochemical Society
5 Conference Proceedings Rapid Thermal Processing of III-Nitrides

Hong, J., Lee, J. W., Vartuli, C. B., MacKenzie, J. D., Donovan, S. M., Abernathy, C. R., Crockett, R. V., Pearton, S. …

MRS - Materials Research Society
11 Conference Proceedings High Resistivity InAlN by Nitrogen or Oxygen Implantation

Zolper, J. C., Pearton, S. J., Abernathy, C. R., Vartuli, C. B.

MRS - Materials Research Society
6 Conference Proceedings Effect of Dry Etching in III-Nitride Surface Properties

Ren, F., Lothian, J.R., Pearton, S.J., Abernathy, C.R., Vartuli, C.B., Karlicek, B., Karlicek, R.F., Jr., MacKenzie, …

Electrochemical Society
12 Conference Proceedings InN-Based Ohmic Contacts to AlInN

Donovan, S. M., Ren, F., MacKenzie, J. D., Abernathy, C. R., Pearton, S. J., Jones, K.

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12