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Plasma Damage Effects in InAlN Field-Effect Transistors

Author(s):
Ren, F.
Lothian, J. R.
Chen, Y. K.
MacKenzie, J. D.
Donovan, S. M.
Abernathy, C. R.
Vartuli, C. B.
Lee, J. W.
Pearton, S. J.
Wilson, R. G.
5 more
Publication title:
Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
468
Pub. date:
1997
Page(from):
385
Pub. info.:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993723 [155899372X]
Language:
English
Call no.:
M23500/468
Type:
Conference Proceedings

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