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Etch Characteristics of GaN Using Inductively-Coupled Cl2/HBr and Cl2/Ar Plasmas

Author(s):
Kim, H. S.
Lee, Y. J.
Lee, Y. H.
Lee, J. W.
Yoo, M. C.
Kim, T. I.
Yeom, G. Y.
2 more
Publication title:
Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
468
Pub. date:
1997
Page(from):
367
Pub. info.:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993723 [155899372X]
Language:
English
Call no.:
M23500/468
Type:
Conference Proceedings

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