Resonant Raman Scattering in GaN/Al0.15Ga0.85N and InyGa1-yN/GaN/AlxGa1-xN Heterostructures

Resonant Raman Scattering in GaN/Al0.15Ga0.85N and InyGa1-yN/GaN/AlxGa1-xN Heterostructures

Author(s):

Behr, D.

Publication title:

Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

468

Pub. Year:

1997

Page(from):

213

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993723 [155899372X]

Language:

English

Call no.:

M23500/468

Type:

Conference Proceedings

Details

TDL ID:	ZA00020780
Series ID:	PA00000011
Conf. info. (Name):	Symposium on gallium nitride and related materials
Conf. info. (Number):	2nd
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1997.04.01-1997.04.04

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