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Exciton confinement effect in semiconductor quantum wells studied by resonant second harmonic generation

Author(s):
Publication title:
Third international conference on intelligent materials : third European conference on smart structures and materials, Lyon/3-4-5 June 1996, center of congress "L'Espace tete d'or"
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
2779
Pub. Year:
1996
Page(from):
777
Page(to):
782
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819421654 [0819421650]
Language:
English
Call no.:
P63600/2779
Type:
Conference Proceedings

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