Micro-Raman and Electron Microscopy Analysis of Cubic GaN Layers on(001)GaAs

Micro-Raman and Electron Microscopy Analysis of Cubic GaN Layers on(001)GaAs

Author(s):

Tabata,A.

Publication title:

Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997

Title of ser.:

Materials science forum

Ser. no.:

264-268

Pub. Year:

1998

Vol.:

Part2

Page(from):

1367

Page(to):

1370

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497928 [0878497927]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00020694
Series ID:	PA00000012
Conf. info. (Name):	ICSCIII-N : International Conference on Silicon Carbide, III-Nitrides Related Materials
Conf. info. (Number):	1997 : 7th
Conf. info. (Venue):	Stockholm, Sweden
Conf. info. (Date):	1997.09.00

Similar Items:

1 Conference Proceedings Surface Reconstruction and MBE Growth of Cubic GaN on(001)GaAs:A Total Energy Study Silva,J.L.F.da, Enderlein,R., Scolfaro,L.M.R., Leite,J.R., Tabata,A., Lischka,K., Schikora,D., Bechstedt,F. Trans Tech Publications	7 Conference Proceedings p- and n-Type Doping of MBE Grown Cubic GaN/GaAs Epilayers As, D. J., Simonsmeier, T., Busch, J., Schottker, B., Lubbers, M., Mimkes, J., Schikora, D., Lischka, K., Kriegseis, W., … MRS - Materials Research Society
2 Conference Proceedings Electrical properties of cubic InN and GaN epitaxial layers as function of temperature Fernandez, J. R. L., Chitta, V. A., Abramof, E., Silva, A. Ferreira da, Leite, J. R., Tabata, A., As, D. J., Frey, T., … MRS-Materials Research Society	8 Conference Proceedings Optical and electrical properties of MBE grown cubic GaN/GaAs epilayers doped by Si As, D. J., Richter, A., Busch, J., Schottker, B., Lubbers, M., Mimkes, J., Schikora, D., Lischka, K., Kriegseis, W., … MRS-Materials Research Society
3 Conference Proceedings Resonant Raman Scattering and the Emission Process in Zincblende-InxGa1-xN Lemos, V., Silveira, E., Leite, J. R., Tabata, A., Trentin, R., Frey, T., As, D. J., Schikora, D., Lischka, K. Trans Tech Publications	9 Conference Proceedings High-Pressure Raman Scattering of Biaxially Strained GaN on GaAs Siegle, H., Goni, A. R., Thomsen, C., Ulrich, C., Syassen, K., Schottker, B., As, D. J., Schikora, D. MRS - Materials Research Society
4 Conference Proceedings Cathodoluminescence of Cubic GaN Epilayers Wang,C., As,D.J., Schikora,D., Schottker,B., Lischka,K. Trans Tech Publications	10 Conference Proceedings An Accurate Method to Determine the Growth Conditions during Molecular Beam Epitaxy of Cubic GaN Schottker,B., Kuhler,J., As,D.J., Schikora,D., Lischka,K. Trans Tech Publications
5 Conference Proceedings Depth-Resolved and Excitation Power Dependent Cathodo-luminescence of MBE-Grown Cubic GaN Epilayers As, D. J., Schottker, C. Wang. B., Schikora, D., Lischka, K. MRS - Materials Research Society	11 Conference Proceedings Optical Properties of Carbon Doped Cubic GaN Epilayers Grown on GaAs (001) Substrate by Molecular Beam Epitaxy As, D.J., Kohler, U., Lischka, K. Materials Research Society
6 Conference Proceedings Mechanisms of Optical Gain in Cubic GaN and InGaN Holst, J., Hoffmann, A., Broser, I., Frey, T., Schottker, B., As, D. J., Schikora, D., Lischka, K. MRS - Materials Research Society	12 Conference Proceedings Electrical and Photoelectrical Characterization of Deep Defects in Cubic GaN on GaAs Lisker, M., Krtschil, A., Witte, H., Christen, J., As, D. J., Schottker, B., Lischka, K. MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12