Characterization of GaN Epilayers Grown on Sapphire and SiC Substrates

Characterization of GaN Epilayers Grown on Sapphire and SiC Substrates

Author(s):

Publication title:

Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997

Title of ser.:

Materials science forum

Ser. no.:

264-268

Pub. Year:

1998

Vol.:

Part2

Page(from):

1355

Page(to):

1358

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497928 [0878497927]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00020694
Series ID:	PA00000012
Conf. info. (Name):	ICSCIII-N : International Conference on Silicon Carbide, III-Nitrides Related Materials
Conf. info. (Number):	1997 : 7th
Conf. info. (Venue):	Stockholm, Sweden
Conf. info. (Date):	1997.09.00

Similar Items:

1 Conference Proceedings Effect of Thermal Strain and Carrier Concentration on the Phonon Frequencies of GaN Wieser,N., Klose,M., Scholz,F., Off,J. Trans Tech Publications	7 Conference Proceedings Near-Bandgap Photoluminescence Decay Time in GaN Epitaxial Layers Grown on Sapphire Hangleiter, A., Im, J. S., Forner, T., Harle, V., Scholz, F. MRS - Materials Research Society
2 Conference Proceedings GaN PIN Photodiodes Grown on Sapphire and SiC Substrates Smith, G. M., Chriss, M. F., Tamweber, F. D., Boutros, K. S., Flynn, J. S., Keogh, D. M. Trans Tech Publications	8 Conference Proceedings Optical Properties of Cubic Phase GaN Epilayers Grown by Molecular Beam Epitaxy on SiC/Silicon(100)Substrates Godlewski,M., Ivanov,V.Yu., Bergman,J.P., Monemar,B., Barski,A., Langer,R. Trans Tech Publications
3 Conference Proceedings Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates Yu, Z., Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Muth, J. F., Cook, J. W., Jr., Schetzina, J. F., Haberern, K. … MRS - Materials Research Society	9 Conference Proceedings Intersubband Absorptions in Doped and Undoped GaN/AlN Quantum Wells at Telecommunication Wavelengths Grown on Sapphire and 6H-SiC Substrates Helman, A., Tchernycheva, M., Lusson, A., Warde, E., Julien, F.H., Monroy, E., Fossard, F., Dang, Le Si, Daudin, B. Materials Research Society
4 Conference Proceedings Structural Characterization of GaN Epilayers Grown on Patterned Sapphire Substrates Kim, Chang-Soo, Moon, Ji-Hyun, Lee, Sang-Jun, Noh, Sam-Kyu, Kim, Je Won, Lee, Kyuhan, Choi, Yong Dae, Song, Jay P. Materials Research Society	10 Conference Proceedings Intraband Transitions on GaN/AlN Quantum Wells Grown on Sapphire (0001) and 6H-SiC Substrates Helman, A., Tchernycheva, M., Moumanis, K., Lusson, A., Warde, E., Julien, F., Monroy, E., Fossard, F., Daudin, B., Si … Trans Tech Publications
5 Conference Proceedings High Magnetic Field Studies of AlGaN/GaN Heterostructures Grown On Bulk GaN, SiC, and Sapphire Substrates Knap, W., Borovitskaya, E., Shur, M. S., Gaska, R., Brandt, B., Maude, D., Frayssinet, E., Lorenzini, P., Grandjean, N., … Materials Research Society	11 Conference Proceedings Preliminary Characterization of GaN MBE Epitaxial Layers Grown on Nanoporous 6H-SiC Substrates Wolan, J.T., Gopalkrishna, A., Saddow, S. E., Mynbaeu, M., Morkoc, H., Reshchikov, M., Yun, F., Dmitriev, V., Wood, C. … Materials Research Society
6 Conference Proceedings Electrical and Structural Properties of AlGaN/GaN Heterostructures Grown onto 8°-Off-Axis 4H-SiC Epilayers F. Roccaforte, G. Greco, M.H. Weng, F. Giannazzo, V. Raineri Trans Tech Publications	12 Conference Proceedings Structural Characterization of GaN Epitaxial Layers Grown on 4H-SiC Substrates with Different Off-Cut P. Caban, K. Kościewicz, W. Strupiński, J. Szmidt, K. Pagowska Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12