Room Temperature Photoluminescence Linewidth versus Material Quality of GaN

Room Temperature Photoluminescence Linewidth versus Material Quality of GaN

Author(s):

Publication title:

Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997

Title of ser.:

Materials science forum

Ser. no.:

264-268

Pub. Year:

1998

Vol.:

Part2

Page(from):

1319

Page(to):

1322

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497928 [0878497927]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00020694
Series ID:	PA00000012
Conf. info. (Name):	ICSCIII-N : International Conference on Silicon Carbide, III-Nitrides Related Materials
Conf. info. (Number):	1997 : 7th
Conf. info. (Venue):	Stockholm, Sweden
Conf. info. (Date):	1997.09.00

Similar Items:

1 Conference Proceedings Electronic Structure and Temperature Dependence of Excitons in GaN Buyanova, I. A., Bergman, J. P., Li, W., Monemar, B., Amano, H., Akasaki, I. MRS - Materials Research Society	7 Conference Proceedings Carrier and exciton dynamics in In0.15Ga0.85N/GaN multiple quantum well structures Monemar,B., Bergman,J.P., Pozina,G., Dalfors,J., Sernelius,B.E., Holtz,P.O., Amano,H., Akasaki,I. SPIE - The International Society for Optical Engineering
2 Conference Proceedings Photoluminescence Related to the 2-Dimensional Electron Gas in Modulation Doped GaN/AlGaN Structures Bergman, J. P., Lundstrom, T., Monemar, B., Amano, H., Akasaki, I. MRS - Materials Research Society	8 Conference Proceedings Photoluminescence of Excitons in n-Type In0.11Ga0.89N/In0.01Ga0.99N Multiple Quantum Wells Monemar, B., Paskov, P.P., Bergman, J.P., Pozina, G., Kamiyama, S., Iwaya, M., Amano, H., Akasaki, I. Materials Research Society
3 Conference Proceedings Exciton Lifetimes in GaN Bergman, J. P., Harris, C., Monemar, B., Amano, H., Akasaki, I. MRS - Materials Research Society	9 Conference Proceedings Radiative Recombination in InGaN/GaN Multiple Quantum Wells Bergman, J. P., Monemar, B., Pozina, G., Sernelius, B. E., Holtz, P. O., Amano, H., Akasaki, I. Trans Tech Publications
4 Conference Proceedings Luminescence of InGaN/GaN Multiple Quantum Wells Grown by Mass-Transport Pozina, G., Bergman, J.P., Monemar, B., Iwaya, M., Nitta, S., Amano, H., Akasaki, I. Trans Tech Publications	10 Conference Proceedings Optical Properties of InGaN/GaN Multiquantum-Well Structures Bergman, J. P., Saksulv, N., Dalfors, J., Holtz, P. O., Monemar, B., Amano, H., Akasaki, I. MRS - Materials Research Society
5 Conference Proceedings Photoluminescence and Electroluminescence Characterization of InxGa1-xN/InyGa1-yN Multiple Quantum Well Light Emitting Diodes Bergman, J.P., Pozina, G., Monemar, B., Kamiyama, S., Iwaya, M., Amano, H., Akasaki, I. Trans Tech Publications	11 Conference Proceedings Optical properties of InGaN/GaN and AlGaN/GaN multiple quantum well structures Monemar, B., Paskov, P.P., Haratizadeh, H., Pozina, G.R., Bergman, J.P., Kamiyama, S., Iwaya, M., Amano, H., Akasaki, I. SPIE-The International Society for Optical Engineering
6 Conference Proceedings Photoluminescence and Electroluminescence Characterization of InxGa1-xN/InyGa1-yN Multiple Quantum Well Light Emitting Diodes Bergman, J.P., Pozina, G., Monemar, B., Kamiyama, S., Iwaya, M., Amano, H., Akasaki, I. Trans Tech Publications	12 Conference Proceedings Evidence of Potential Fluctuations in Modulation-Doped GaN/AlGaN Heterostructures Buyanov, A. V., Sandberg, J., Bergman, J. P., Sernelius, B. E., Holtz, P-O., Monemar, B., Amano, H., Akasaki, I. MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12