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MBE Growth of Device-Quality Cubic GaN on Atomically Flat(001)GaAs Prepared by Atomic-Hydrogen Treatment at High-Temperatures

Author(s):
Yoshikawa,A.
Qin,Z.
Nagano,H.
Sugure,Y.
Jia,A.
Kobayashi,M.
Kato,Y.
Takahashi,K.
3 more
Publication title:
Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997
Title of ser.:
Materials science forum
Ser. no.:
264-268
Pub. Year:
1998
Vol.:
Part2
Page(from):
1221
Page(to):
1224
Pub. info.:
Zuerich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497928 [0878497927]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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