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Generation Mechanisms of Trapped Charges in Oxide Layers of 6H-SiC MOS Structures Irradiated with Gamma-Rays

Author(s):
Yoshikawa,M.
Saitoh,K.
Ohshima,T.
Itoh,H.
Nashiyama,I.
Takahashi,Y.
Ohnishi,K.
Okumura,H.
Yoshida,S.
4 more
Publication title:
Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997
Title of ser.:
Materials science forum
Ser. no.:
264-268
Pub. date:
1998
Vol.:
Part2
Page(from):
1017
Page(to):
1020
Pub. info.:
Zuerich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497928 [0878497927]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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