Generation Mechanisms of Trapped Charges in Oxide Layers of 6H-SiC MOS Structures Irradiated with Gamma-Rays

Generation Mechanisms of Trapped Charges in Oxide Layers of 6H-SiC MOS Structures Irradiated with Gamma-Rays

Author(s):

Yoshikawa,M.

Publication title:

Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997

Title of ser.:

Materials science forum

Ser. no.:

264-268

Pub. Year:

1998

Vol.:

Part2

Page(from):

1017

Page(to):

1020

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497928 [0878497927]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00020694
Series ID:	PA00000012
Conf. info. (Name):	ICSCIII-N : International Conference on Silicon Carbide, III-Nitrides Related Materials
Conf. info. (Number):	1997 : 7th
Conf. info. (Venue):	Stockholm, Sweden
Conf. info. (Date):	1997.09.00

Similar Items:

1 Conference Proceedings EFFECTS OF GAMMA-RAY IRRADIATION AND THERMAL ANNEALING ON CHARACTERISTICS OF 3C-SiC MOS STRUCTURE Yoshikawa, M., Morita, Y., Itoh, H., Nashiyama, I., Okumura, H., Misawa, S., Yoshida, S. Materials Research Society	7 Conference Proceedings Study of Thermal Annealing of Vacancies in Ion Implanted 3C-SiC by Positron Annihilation Ohshima,T., Uedono,A., Itoh,H., Abe,K., Suzuki,R., Ohdaira,T., Aoki,Y., Yoshikawa,M., Mikado,T., Okumura,H., Yoshida,S., … Trans Tech Publications
2 Conference Proceedings Gamma-Ray Irradiation Effects on the Electrical Characteristics of 6H-SiC MOSFETs with Annealed Gate-Oxide Ohshima, T., Lee, K. K., Ohi, A., Yoshikawa, M., Itoh, H. Trans Tech Publications	8 Conference Proceedings Reduction of Interface Traps and Enhancement of Channel Mobility in n-Channel 6H-SiC MOSFETs by Irradiation with Gamma-Rays S. Hishiki, S.A. Reshanov, T. Ohshima, H. Itoh, G. Pensl Trans Tech Publications
3 Conference Proceedings Gamma-Ray Irradiation Effects on the Electrical Characteristics of 6H-SiC MOSFETs with Annealed Gate-Oxide Ohshima, T., Lee, K.K., Ohi, A., Yoshikawa, M., Itoh, H. Trans Tech Publications	9 Conference Proceedings Characterization of Defects in As-Grown and Electron-Irradiated 3C-SiC Epilayers by Using Slow Positron Itoh,H., Yoshikawa,M., Nashiyama,I., Wei,L., Tanigawa,S., Misawa,S., Okumura,H., Yoshida,S. Trans Tech Publications
4 Conference Proceedings Influence of Post-Oxidation Annealing on Electrical Characteristics in 6H-SiC MOSFETs Ohshima, T., Yoshikawa, M., Itoh, H., Kojima, K., Okada, S., Nashiyama, I. Trans Tech Publications	10 Conference Proceedings ESR Studies of Defects in p-Type 6H-SiC Irradiated with 3MeV-Electrons Cha,D., Itoh,H., Morishita,N., Kawasuso,A., Ohshima,T., Watanabe,Y., Ko,J., Lee,K., Nashiyama,I. Trans Tech Publications
5 Conference Proceedings Steam Annealing Effects on CV Characteristics of MOS Structures on (11-20) Face of 4H-SiC Yoshikawa, M., Ohshima, T., Itoh, H., Takahashi, K., Kitabatake, M. Trans Tech Publications	11 Conference Proceedings Relationship between the Current Direction in the Inversion Layer and the Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors on … Ohshima, T., Lee, K.K., Ishida, Y., Kojima, K., Tanaka, Y., Takahashi, T., Yoshikawa, M., Okumura, H., Arai, K., Kamiya, … Trans Tech Publications
6 Conference Proceedings Hot-Implantation of Phosphorus Ions into 6H-SiC Abe,K., Ohshima,T., Itoh,H., Aoki,Y., Yoshikawa,M., Nashiyama,I., Iwami,M. Trans Tech Publications	12 Conference Proceedings Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions Ohshima, T., Uedono, A., Itoh, H., Yoshikawa, M., Kojima, K., Okada, S., Nashiyama, I., Abe, K., Tanigawa, S., Frank, … Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12