Interface States and Field-Effect Mobility in 6H-SiC MOS Transistors
- Author(s):
- Publication title:
- Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997
- Title of ser.:
- Materials science forum
- Ser. no.:
- 264-268
- Pub. Year:
- 1998
- Vol.:
- Part2
- Page(from):
- 1013
- Page(to):
- 1016
- Pub. info.:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878497928 [0878497927]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Carrier Lifetime Extraction from a 6H-SiC High Voltage p-i-n Rectifier Reverse Recovery Waveform
Trans Tech Publications |
Trans Tech Publications |
2
Conference Proceedings
Design and Simulations of 5000V MOS-Gated Bipolar Transistor (MGT) on 4H-SiC
Trans Tech Publications |
8
Conference Proceedings
Design and Processing of High-Voltage 4H-SiC Trench Junction Field-Effect Transistor
Trans Tech Publications |
MRS - Materials Research Society |
9
Conference Proceedings
Design and Processing of High-Voltage 4H-SiC Trench Junction Field-Effect Transistor
Trans Tech Publications |
Trans Tech Publications |
MRS - Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |