On the Interpretation of High-Frequency Capacitance Data of SiC MOS Structures:The Effect of Thermal Non-Equilibrium

On the Interpretation of High-Frequency Capacitance Data of SiC MOS Structures:The Effect of Thermal Non-Equilibrium

Author(s):

Publication title:

Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997

Title of ser.:

Materials science forum

Ser. no.:

264-268

Pub. Year:

1998

Vol.:

Part2

Page(from):

981

Page(to):

984

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497928 [0878497927]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00020694
Series ID:	PA00000012
Conf. info. (Name):	ICSCIII-N : International Conference on Silicon Carbide, III-Nitrides Related Materials
Conf. info. (Number):	1997 : 7th
Conf. info. (Venue):	Stockholm, Sweden
Conf. info. (Date):	1997.09.00

Similar Items:

1 Conference Proceedings High-Frequency Capacitance Measurements on Metal-Insulator-Semiconductor Structures in Thermal Nonequilibrium Condition Sadeghi, M., Jauhiainen, A., Liss, B., Sveinbjornsson, E. O., Engstrom, O. MRS - Materials Research Society	7 Conference Proceedings Deep Traps in 4H-SiC MOS Capacitors Investigated by Deep Level Transient Spectroscopy E.Ö. Sveinbjörnsson, O. Gíslason Trans Tech Publications
2 Conference Proceedings Characterization of SiC MOS Structures Using Conductance Spectroscopy and Capacitance Voltage Analysis Sveinbjornsson, E. O., Ahnoff, M., Olafsson, H. O. Trans Tech Publications	8 Conference Proceedings Interpretation of Impedance Spectroscopic Data for Thermally Structurized Polymers Paasch,G., Schwarzenberg,M., Jobst,K., Sawtschenko,L. Trans Tech Publications
3 Conference Proceedings Non-Equilibrium Related Effects in MOS-SOI Structures Capacitance-Voltage Measurements Analysis Zareba,A., Ikraiam,F., Beck,R.B., Jakubowski,A. Narosa Publishing House	9 Conference Proceedings Frequency Dependence of Accumulation Capacitance of MOS Structure with Ultrathin Oxide Layer Bhat,Vishwanath K., Bhat,K.N., Subrahmanyam,A. SPIE - The International Society for Optical Engineering
4 Conference Proceedings Effect of High Temperature Oxidation of 4H-SiC on the Near-Interface Traps Measured by TDRC F. Allerstam, E.Ö. Sveinbjörnsson Trans Tech Publications	10 Conference Proceedings TRANSFORMATION OF GOLD IN N-TYPE SILICON FROM A NEW DEEP LEVEL TO THE GOLD ACCEPTOR LEVEL Sveinbjornsson, Einar ?, Engstrom, Olof Materials Research Society
5 Conference Proceedings High Frequency Inversion Capacitance Measurements for 6H-SiC n-MOS Capacitors from 450 to 600°C R.N. Ghosh, R. Loloee, T. Isaacs-Smith, J.R. Williams Trans Tech Publications	11 Conference Proceedings Phosphorus Diffusion Gettering of Gold in Silicon Sveinbjornsson,E.O., Engstrom,O., Sodervall,U. Trans Tech Publications
6 Conference Proceedings The Influence of Gate Material, SiO₂ Fabrication Method and Gate Edge Effect on Interface Trap Density in 3C-SiC MOS Capacitors T. Gutt, T. Malachowski, H.M. Przewłocki, O. Engström, M. Bakowski Trans Tech Publications	12 Conference Proceedings New Evidence of Interfacial Oxide Traps in n-Type 4H- and 6H-SiC MOS Structures Olafsson, H.OE., Sveinbjornsson, Einar, Rudenko, T.E., Kilchytska, V.I., Tyagulski, I.P., Osiyuk, I.N. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12