Theoretical Investigation of the Electrical Behavior of SiC MESFETs for Microwave Power Amplification

Theoretical Investigation of the Electrical Behavior of SiC MESFETs for Microwave Power Amplification

Author(s):

Publication title:

Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997

Title of ser.:

Materials science forum

Ser. no.:

264-268

Pub. Year:

1998

Vol.:

Part2

Page(from):

973

Page(to):

976

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497928 [0878497927]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00020694
Series ID:	PA00000012
Conf. info. (Name):	ICSCIII-N : International Conference on Silicon Carbide, III-Nitrides Related Materials
Conf. info. (Number):	1997 : 7th
Conf. info. (Venue):	Stockholm, Sweden
Conf. info. (Date):	1997.09.00

Similar Items:

1 Conference Proceedings Evaluating the Three Common SiC Polytypes for MESFET Applications Roschke,M., Schwierz,F., Paasch,G., Schipanski,D. Trans Tech Publications	7 Conference Proceedings Electrical and Physical Behavior of SiC Layers on Insulator (SiCOI) Hugonnard-Bruyere, E., Letertre, F., Cioccio, L. Di, Bardeleben, H. J. von, Cantin, J. L., Ouisse, T., Billon, T., … Trans Tech Publications
2 Conference Proceedings Electrical Instability Suppression in 4H-SiC Power MESFETs Tucker, J.B., Beaupre, R.A., Zhang, A.P., Garrett, J.L., Rowland, L.B., Kaminsky, E.B., Kretchmer, J.W., Vertiatchikh, … Materials Research Society	8 Conference Proceedings *AlGaN microwave power HFETs on insulating SiC substrates Sullivan, G., Gertner, E., Pittman, R., Chen, M., Pierson, R., Higgins, A., Chen, Q., Yang, J-W., Smith, R. P., Perez, … MRS-Materials Research Society
3 Conference Proceedings Important Role of Parasitic Regions in Electrical Characteristics of SiC MESFETs Cha, H. Y., Choi, Y. C., Eastman, L. F., Spencer, M. G., Ardaravicius, L., Matulionis, A., Kiprijanovic, O. Trans Tech Publications	9 Conference Proceedings Monolithic Integration of Power MESFET for High Temperature SiC Integrated Circuits V. Banu, J. Montserrat, M. Alexandru, X. Jordá, J. Millán Trans Tech Publications
4 Conference Proceedings Amplification in Graphene Nanoribbon Junctions J. Pezoldt, B. Hähnlein, H.O. Jacobs, F. Schwierz Trans Tech Publications	10 Conference Proceedings Surface Control of 4H-SiC MESFETs Hilton, K.P., Uren, M.J., Hayes, D.G., Johnson, H.K., Wilding, P.J. Trans Tech Publications
5 Conference Proceedings Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating Substrates Gassoumi, M., Sghaier, N., Dermoul, I., Chekir, F., Maaref, H., Bluet, J.M., Guillot, G., Morvan, E., Noblanc, O., Dua, … Trans Tech Publications	11 Conference Proceedings Surface Control of 4H-SiC MESFETs Hilton, K., Uren, M.J., Hayes, D.G., Johnson, H.K., Wilding, P.J. Trans Tech Publications
6 Conference Proceedings *Recent progress in SiC microwave MESFETs Allen, S. T., Sheppard, S. T., Pribble, W. L., Sadler, R. A., Alcorn, T. S., Ring, Z., Palmour, J. W. MRS-Materials Research Society	12 Conference Proceedings Double Implanted Power MESFET Technology in 4H-SiC Horsfall, A.B., Ortolland, S., Wright, N.G., Johnson, C.M., Knights, A.P. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12