Silicon Carbide MESFET's for High-Power S-Band Applications

Silicon Carbide MESFET's for High-Power S-Band Applications

Author(s):

Allen,S.T.

Publication title:

Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997

Title of ser.:

Materials science forum

Ser. no.:

264-268

Pub. Year:

1998

Vol.:

Part2

Page(from):

953

Page(to):

956

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497928 [0878497927]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00020694
Series ID:	PA00000012
Conf. info. (Name):	ICSCIII-N : International Conference on Silicon Carbide, III-Nitrides Related Materials
Conf. info. (Number):	1997 : 7th
Conf. info. (Venue):	Stockholm, Sweden
Conf. info. (Date):	1997.09.00

Similar Items:

1 Conference Proceedings *Recent progress in SiC microwave MESFETs Allen, S. T., Sheppard, S. T., Pribble, W. L., Sadler, R. A., Alcorn, T. S., Ring, Z., Palmour, J. W. MRS-Materials Research Society	7 Conference Proceedings Nitrogen Passivation of the Interface States Near the Conduction Band Edge in 4H-Silicon Carbide Williams, J.R., Chung, G.Y., Tin, C.C., McDonald, K., Farmer, D., Chanana, R.K., Weller, R.A., Pantelides, S.T., … Materials Research Society
2 Technical Paper 6H-Silicon Carbide Power Devices for Aerospace Applications Palmour,J.W., Carter Jr.,C.H., Edmund,J.A., Kong,H.-S. Society of Automotive Engineering, Inc.	8 Conference Proceedings Silicon Carbide MOSFETs for Medium Voltage Megawatt Scale Systems V. Pala, E. van Brunt, B. Hull, S. Allen, J.W. Palmour Trans Tech Publications
3 Conference Proceedings RF Performance and Reliability of SiC MESFETs on High Purity Semi-Insulating Substrates Sriram, S., Ward, A., Janke, C., Alcorn, T., Hagleitner, H., Henning, J., Wieber, K., Jenny, J., Sumakeris, J., Allen, … Trans Tech Publications	9 Conference Proceedings Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition Kordina,O., Irvine,K., Sumakeris,J., Kong,H.S., Paisley,M.J., ,C.H.Carter,Jr. Trans Tech Publications
4 Conference Proceedings Large Diameter 4H-SiC Substrates for Commercial Power Applications Powell, A.R., Leonard, R.T., Brady, M.F., Muller, St.G., Tsvetkov, V.F., Trussell, R., Sumakeris, J.J., Hobgood, H.McD., … Trans Tech Publications	10 Conference Proceedings Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings L. Cheng, J.W. Palmour, A.K. Agarwal, S.T. Allen, E.V. Brunt Trans Tech Publications
5 Conference Proceedings Sublimation-Grown Semi-Insulating SiC for High Frequency Devices Muller, St.G., Brady, M.F., Brixius, W.H., Glass, R.C., Hobgood, H.M., Jenny, J.R., Leonard, R.T., Malta, D.P., Powell, … Trans Tech Publications	11 Conference Proceedings High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production Muller, St.G., Brady, M.F., Brixius, W.H., Fechko, G., Glass, R.C., Henshall, D., Hobgood, H.M., Jenny, J.R., Leonard, … Trans Tech Publications
6 Conference Proceedings Status of 4H-SiC Substrate and Epitaxial Materials for Commercial Power Applications Powell, A.R., Sumakeris, J.J., Leonard, R.T., Brady, M.F., Muller, St.G., Tsvetkov, V.F., Hobgood, H.McD., Burk, A.A., … Materials Research Society	12 Conference Proceedings High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production Muller, St.G., Brady, M.F., Brixius, W.H., Fechko, G., Glass, R.C., Henshall, D., Hobgood, H.M., Jenny, J.R., Leonard, … Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12