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High-Voltage(>2.5kV)4H-SiC Schottky Reetifiers Processed on Hot-Wall CVD and High-Temperature CVD Layers

Author(s):
Kimoto,T.
Wahab,Q.
Ellison,A.
Forsberg,U.
Tuominen,M.
Yakimova,R.
Henry,A.
Janzen,E.
3 more
Publication title:
Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997
Title of ser.:
Materials science forum
Ser. no.:
264-268
Pub. date:
1998
Vol.:
Part2
Page(from):
921
Page(to):
924
Pub. info.:
Zuerich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497928 [0878497927]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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