Thermal Evolution of Defects in H-Implanted Silicon Investigated by Slow Positrons

Thermal Evolution of Defects in H-Implanted Silicon Investigated by Slow Positrons

Author(s):

Publication title:

Positron annihilation : ICPA-10 : Proceedings of the 10th International Conference on Positron Annihilation, May 23-29, 1994, Beijing, China

Title of ser.:

Materials science forum

Ser. no.:

175-178

Pub. Year:

1995

Vol.:

Part1

Page(from):

141

Page(to):

144

Pub. info.:

Aederlmannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878496860 [0878496866]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00020689
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Positron Annihilation
Conf. info. (Number):	10th
Conf. info. (Venue):	Beijing, China
Conf. info. (Date):	1994.05.23-1994.05.29

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