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DETECTION OF NON STOICHIOMETRIC VACANCY DEFECTS IN CdTe,HgTe AND Hg1-x CdxTe BY POSITRON ANNIHILATION.

Author(s):
GEFFROY,B.
CORBEI,C.
STUCKY,M.
TRIBOULET,R.
HAU-TOJARVI,P.
PLAZAOLA,F.
SAARINEN,K.
RAJAINMAKI,H.
AALTONEN,J.
MOSER,P.
SENGUPTA,A.
PAUTRAT,J.L.
7 more
Publication title:
Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986
Title of ser.:
Materials science forum
Ser. no.:
10-12
Pub. date:
1986
Vol.:
Part3
Page(from):
1241
Page(to):
1246
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878495511 [0878495517]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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