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EFFECTS OF 450。?THERMAL ANNEALING UPON OXYGEN PRECIPITATION IN B-DOPED CZ Si WAFERS.

Author(s):
HAHN,S.
SHATAS,S.
STEIN,H.J.
ARST,M.
SADANA,D.K.
REK,Z.U.
STOJANOFF,V.
2 more
Publication title:
Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986
Title of ser.:
Materials science forum
Ser. no.:
10-12
Pub. date:
1986
Vol.:
Part3
Page(from):
975
Page(to):
978
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878495511 [0878495517]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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