THE ELECTRONIC STRUCTURE OF THE OXYGEN-VACANCY COMPLEX IN SILICON.
- Author(s):
- Publication title:
- Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986
- Title of ser.:
- Materials science forum
- Ser. no.:
- 10-12
- Pub. Year:
- 1986
- Vol.:
- Part3
- Page(from):
- 875
- Page(to):
- 880
- Pub. info.:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878495511 [0878495517]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |
Narosa Publishing House |
SPIE-The International Society for Optical Engineering |
4
Conference Proceedings
Formation kinetics of the Al-related shallow thernral donors:a probe for oxygen diffusion in silicon
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Materials Research Society |