Band structure of interdiffused InGaN/GaN quantum wells

Band structure of interdiffused InGaN/GaN quantum wells

Author(s):

Cheung,E.M.T. ( Univ.of Hong Kong )
Chan,M.C.Y. ( Univ.of Hong Kong )
Li,E.H. ( Univ.of Hong Kong )

Publication title:

Optoelectronic Materials and Devices

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3419

Pub. Year:

1998

Page(from):

317

Page(to):

324

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819428738 [0819428736]

Language:

English

Call no.:

P63600/3419

Type:

Conference Proceedings

Details

TDL ID:	ZA00020634
Series ID:	PA00000029
Conf. info. (Name):	Asia Pacific Symposium on Optoelectronics : Optoelectronic Materials and Devices
Conf. info. (Number):	1998
Conf. info. (Venue):	Taipei, Taiwan
Conf. info. (Date):	1998.07.09-1998.07.11

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