High-temperature operation of 650-nm AIGaIP quantum well laser diodes grown by LP-MOCVD

High-temperature operation of 650-nm AIGaIP quantum well laser diodes grown by LP-MOCVD

Author(s):

Ma,X. ( Institute of Semiconductors (China) )

Cao,Q. ( Institute of Semiconductors (China) )

Wang,S. ( Institute of Semiconductors (China) )

Guo,L. ( Institute of Semiconductors (China) )

Lian,P. ( Institute of Semiconductors (China) )

Wang,L. ( Institute of Semiconductors (China) )

Zhang,X. ( Institute of Semiconductors (China) )

Yang,Y. ( Institute of Semiconductors (China) )

Zhang,H. ( Institute of Semiconductors (China) )

Wang,G. ( Institute of Semiconductors (China) )

Chen,L. ( Institute of Semiconductors (China) )

6 more

Publication title:

Optoelectronic Materials and Devices

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3419

Pub. Year:

1998

Page(from):

131

Page(to):

136

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819428738 [0819428736]

Language:

English

Call no.:

P63600/3419

Type:

Conference Proceedings

Details

TDL ID:	ZA00020634
Series ID:	PA00000029
Conf. info. (Name):	Asia Pacific Symposium on Optoelectronics : Optoelectronic Materials and Devices
Conf. info. (Number):	1998
Conf. info. (Venue):	Taipei, Taiwan
Conf. info. (Date):	1998.07.09-1998.07.11

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