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Homoepitaxial growth of InGaN/GaN double-heterostructure light-emitting diode by low-pressure MOCVD

Author(s):
Choi,Y.H. ( LG Corporate Institute of Technology (Korea) )
Kim,S.W. ( LG Corporate Institute of Technology (Korea) )
Yi,J.H. ( LG Corporate Institute of Technology (Korea) )
Yoo,T.-K ( LG Corporate Institute of Technology (Korea) )
Hong,C.H. ( Chonbuk National Univ.(Korea) )
Kim,S.T. ( Taejon National Univ.of Technology (Korea) )
1 more
Publication title:
Optoelectronic Materials and Devices
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3419
Pub. Year:
1998
Page(from):
16
Page(to):
19
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819428738 [0819428736]
Language:
English
Call no.:
P63600/3419
Type:
Conference Proceedings

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