Blank Cover Image

Reliability of GaAs MESFETs

Author(s):
Publication title:
Semiconductor device reliability
Title of ser.:
NATO ASI series. Series E, Applied sciences
Ser. no.:
175
Pub. Year:
1990
Page(from):
455
Page(to):
469
Pages:
15
Pub. info.:
Dordrecht: Kluwer Academic Publishers
ISSN:
0168132X
ISBN:
9780792305361 [0792305361]
Language:
English
Call no.:
N11482/175
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Failure Mechanisms of GaAs MESFETs and Low-Noise HEMTs

Magistrali F., Tedesco C., Zanoni E.

Kluwer Academic Publishers
7 Conference Proceedings Comparison of optical imaging and functional magnetic resonance imaging of the human brain using a photon-hitting density weight in the calculation of the BOLD …

Sassaroli, A., Frederick, B. B., Tong, Y., Renshaw, P. F., Fantini, S.

SPIE - The International Society of Optical Engineering
2 Conference Proceedings Deep Levels in GaAs MESFET'S

Machac,P., Pantucek,V., Merta,J.

Trans Tech Publications
8 Conference Proceedings Effect of Gate Profile on the Characteristics of 0.5μm GaAs MESFETs

Naik, A.A., Rawal, D.S., Prabhakar, S., Sai Saravanan, G., Sehgal, B.K., Gulati, R., Vyas, H.P., Kumar, Rajesh, …

SPIE-The International Society for Optical Engineering
3 Conference Proceedings An Historical Perspective of GaAs MESFET Reliability Work at Plessey

Turner James, Conlon R.

Kluwer Academic Publishers
9 Conference Proceedings Noninvasive thermal imaging of GaAs MESFETs

M. de Boer, H. Winkel, J. Verduyn, F.L.M. van den Bogaart, J.S. de Vries

Society of Photo-optical Instrumentation Engineers
4 Conference Proceedings HIGH TEMPERATURE PERFORMANCE , RELIABILITY AND SIMULATION OF GaAs MESFETs WITH CVD DIAMOND HEAT SINKS

Zhu, L., Tang, Pin F., Christou, A.

Materials Research Society
10 Conference Proceedings Concurrent NIRS-fMRI activation studies by using a new method for BOLD signal analysis

A. Sassaroli, B. d. Frederick, Y. Tong, P. F. Renshaw, S. Fantini

SPIE - The International Society of Optical Engineering
5 Conference Proceedings USE OF Pt GATE METALLIZATION TO REDUCE GATE LEAKAGE CURRENT IN GaAs MESFETs

Ren, F., Emerson, A. B., Pearton, S. J., Hobson, W. S., Fullowan, T. R., Lothian, J.

Materials Research Society
11 Conference Proceedings Reliability of high-power AlGaAs/GaAs QW laser diodes

Dabkowski,F.P., Pendse,D.R., Barrett,R.J., Chin,A.K., Jollay,R., Clausen,E.M., Hughes,Jr.,L.C., Sanders,N.B.

SPIE-The International Society for Optical Engineering
6 Conference Proceedings Study of Radiation Induced Resistance Mechanisms in GaAs MESFET and TLM Structures

Luo, B., Schoenfeld, D., Johnson, W.J., Pearton, S.J., Ren, F.

Electrochemical Society
12 Conference Proceedings Reliability Issues due to Hot-Electron Effects in GaAs-Based MESFET's and HEMT's

Zanoni, E., Tedesco, C., Neviani, A., Meneghesso, G.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12