Growth of high-quality GaN and Al.Ga1.N Layers by an MOVPE technique

Growth of high-quality GaN and Al.Ga1.N Layers by an MOVPE technique

Author(s):

Paszkiewicz,R. ( Wroclaw Univ.of Technology )

Publication title:

Epilayers and heterostructures in optoelectronics and semiconductor technology : International Conference on Solid State Crystals '98 : 12-16 October 1998, Zakopane, Poland

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3725

Pub. Year:

1999

Page(from):

21

Page(to):

24

Pub. info.:

Bellingham, Wash.: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819431998 [0819431990]

Language:

English

Call no.:

P63600/3725

Type:

Conference Proceedings

Details

TDL ID:	ZA00020401
Series ID:	PA00000029
Conf. info. (Name):	International Conference on Solid State Crystals
Conf. info. (Number):	1998
Conf. info. (Venue):	Zakopane, Poland
Conf. info. (Date):	1998.10.12-1998.10.16

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