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High-quality LEO growth and characterization of GaN films on AI2O3 and Si substrates

Author(s):
Publication title:
Epilayers and heterostructures in optoelectronics and semiconductor technology : International Conference on Solid State Crystals '98 : 12-16 October 1998, Zakopane, Poland
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3725
Pub. Year:
1999
Page(from):
14
Page(to):
20
Pub. info.:
Bellingham, Wash.: SPIE - The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819431998 [0819431990]
Language:
English
Call no.:
P63600/3725
Type:
Conference Proceedings

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