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Correlation of carrier lifetimes and arsenic-antisite defects in LT-GaAs grown at different substrate temperatures

Author(s):
Publication title:
Ultrafast phenomena in semiconductors III : 27-29 January, 1999, San Jose, California
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3624
Pub. date:
1999
Page(from):
50
Page(to):
56
Pub. info.:
Bellingham, Wash.: SPIE - The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819430946 [0819430943]
Language:
English
Call no.:
P63600/3624
Type:
Conference Proceedings

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