Simulation of Resist Profiles for 0.5-ｦﾌm Photolithography at 248 nm

Simulation of Resist Profiles for 0.5-ｦﾌm Photolithography at 248 nm

Author(s):

Publication title:

Polymers for high technology : electronics and photonics

Title of ser.:

ACS symposium series

Ser. no.:

346

Pub. Year:

1987

Page(from):

292

Pub. info.:

Washington, DC: American Chemical Society

ISSN:

00976156

ISBN:

9780841214064 [0841214069]

Language:

English

Call no.:

A05800/346

Type:

Conference Proceedings

Details

TDL ID:	ZA00020336
Series ID:	PA00000004
Conf. info. (Name):	Meeting of the American Chemical Society
Conf. info. (Number):	192nd
Conf. info. (Venue):	Anaheim, CA, USA
Conf. info. (Date):	1986.09.07-1986.09.12

Similar Items:

1 Conference Proceedings SIMULATIONS OF MICROPOSIT 2400-17 RESIST PROFILES FOR 0.5μm PHOTOLITHOGRAPHY AT 248 nm Watts, R.K., Wolf, T.M., Stillwagon, L.E., Hellman, M.Y. Materials Research Society	7 Conference Proceedings Optimization of i-line resist process for 0.5-ｦﾌm polysilicon gate structures using a top-coat layer Chollet,J.-P.E., Basso,M.-T. SPIE-The International Society for Optical Engineering
2 Conference Proceedings FRAM technologies compatible with 0.5-ｦﾌm CMOS logics (Invited Paper) Furumura,Y., Yamazaki,T., Nakamura,M., Inoue,K., Miyazawa,H., Sashida,N., Satomi,R., Katoh,Y., Ozawa,S., Takai,K., … SPIE-The International Society for Optical Engineering	8 Conference Proceedings Fabrication and characterization of gated Si field emitter arrays with gate aperture below 0.5 ｦﾌm Ku,T.-K., Hsieh,B.B., Chen,M.S., Wang,C.-C., Wang,P.W., Hsieh,I.-J., Cheng,H.-C. SPIE-The International Society for Optical Engineering
3 Conference Proceedings CD control comparison for sub-0.18-ｦﾌm patterning using 248-nm lithography and strong resolution enhancement techniques Vandenberghe,G., Marschner,T., Ronse,K., Socha,R.J., Dusa,M.V. SPIE - The International Society for Optical Engineering	9 Conference Proceedings Si0.5Ge0.5 relaxed buffer photodetectors and low-loss polycrystalline silicon waveguides for integrated optical interconnects at ｦﾋ=1.3ｦﾌm Giovane,L.M., Liao,L., Lim,D.R., Agarwal,A.M., Fitzgerald,E.A., Kimerling,L.C. SPIE-The International Society for Optical Engineering
4 Conference Proceedings Top-surface imaging and optical proximity correction:a way to 0.18-ｦﾌm lithography at 248 nm Goethals,A.M., Vertommen,J., Roey,F.Van, Yen,A., Tritchkov,A., Ronse,K., Jonckheere,R., hove,L.Van den SPIE-The International Society for Optical Engineering	10 Conference Proceedings A Two-Step, Lightly Nitrided Gate Oxidation process for Sub-0.5ｦﾌm CMOS Technology Roy, P. K., Ma, Y., Flemming, M. T. MRS - Materials Research Society
5 Conference Proceedings N-Channel MOS Transistors Below 0.5 ｦﾌm with Ultra-Shallow Channels Formed by Low Temperature Selective Silicon Epitaxy Huang, P. L., Seastrand, K., Violette, K. E., Wolf, J., Ozturk, M. C. MRS - Materials Research Society	11 Conference Proceedings Line-edge roughness in sub-0.18-ｦﾌm resist patterns Palmateer,S.C., Cann,S.G., Curtin,J.E., Doran,S.P., Eriksen,L.M., Forte,A.R., Kunz,R.R., Lyszczarz,T.M., Stern,M.B., … SPIE-The International Society for Optical Engineering
6 Conference Proceedings Integration of ICP high-density plasma CVD with CMP and its effects on planarity for sub-0.5-ｦﾌm CMOS technology Yota,J., Brongo,M.R., Dyer,T.W., Rafftesaeth,K.P., Bondur,J.A. SPIE-The International Society for Optical Engineering	12 Conference Proceedings Application of plasma-polymerized methylsilane for 0.18-ｦﾌm photolithography Monget,C., Lee,C.Y., Joubert,O.P., Amblard,G.R., Weidman,T.W., Sugiarto,D., Yang,J., Cormont,F., Inglebert,R.L. SPIE-The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12