A TITANIUM SALICIDE PROCESS SUITABLE FOR SUBMICRON CMOS APPLICATIONS
- Author(s):
- Publication title:
- Silicides, germanides, and their interfaces : Symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 320
- Pub. Year:
- 1994
- Page(from):
- 53
- Pub. info.:
- Pittsburgh, PA: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558992191 [1558992197]
- Language:
- English
- Call no.:
- M23500/320
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Effect of argon or nitrogen preamorphized implant on SALICIDE formation for deep submicron CMOS technology
SPIE-The International Society for Optical Engineering |
Electrochemical Society |
MRS - Materials Research Society |
8
Conference Proceedings
Development of CMOS active pixel image sensors suitable for space applications: some preliminary results
Society of Photo-optical Instrumentation Engineers |
SPIE-The International Society for Optical Engineering |
Electrochemical Society |
4
Conference Proceedings
Optimizing a manufacturing submicron CMOS process for low-voltage applications
SPIE-The International Society for Optical Engineering |
10
Conference Proceedings
25 Design of experiment on the Co salicide process: impact of thickness and anneals on main CMOS Parameters
Electrochemical Society |
SPIE-The International Society for Optical Engineering |
11
Conference Proceedings
IMPACT OF VARIOUS POLYSILICON DEPOSITION PROCESS ON THIN GATE-OXIDE PROPERTIES IN SUBMICRON CMOS TECHNOLOGY
Materials Research Society |
SPIE - The International Society for Optical Engineering |
12
Conference Proceedings
Investigation of salicide processes for thin film SOI microwave applications
Electrochemical Society |