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Nitrogen (N2) Implantation to Suppress Growth of Interfacial Oxide in MOCVD BST and Sputtered BST Films

Author(s):
Nieh, R.
Qi, W-J.
Jeon, Y.
Lee, B. H.
Lucas, A.
Kang, L.
Lee, J. C.
Gardner, M.
Gilmer, M.
4 more
Publication title:
Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
567
Pub. Year:
1999
Page(from):
521
Pub. info.:
Warrendale, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994744 [1558994742]
Language:
English
Call no.:
M23500/567
Type:
Conference Proceedings

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