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Comparison of Valence-Band Tunneling in Pure SiO2, Composite SiO2/Ta2O5, and Pure Ta2O5, in MOSFETs With 1.0 nm-Thick SiO2-Equivalent Gate Dielectrics

Author(s):
Shanware, A.
Massoud, H. Z.
Vogel, E.
Henson, K.
Hauser, J. R.
Wortman, J. J.
1 more
Publication title:
Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
567
Pub. Year:
1999
Page(from):
515
Pub. info.:
Warrendale, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994744 [1558994742]
Language:
English
Call no.:
M23500/567
Type:
Conference Proceedings

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